| 型号(PratNumber) | P3MND6P5 |
| 数量(QTY.) | 10000 |
| 厂家(Brand) | ERIS |
| 封装(Package) | PPAK3X3 |
| 批号(DC.) | 23+ |
| 联系人(contact) | 颜先生/William |
| 电话(contact) | 0755-82170220,21001680 |
| PDF(PDF.) |
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| 询价(Inquire) |
ERIS P3MND6P5 PPAK3X3 21+
General Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency fast switching
applications.
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